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FDN306P Mosfet P-Channel – SOT-23
₹3.85 (Incl. of GST 18%)
GST Credit of ₹0.59available.
Know More
- Drain-Source Breakdown Voltage (BVDSS): -12 V
- On–State Drain Current ID(ON): -10 A
- Gate Threshold Voltage VGS(th): -0.4 V to -1.5 V
- Drain-Source On-Resistance RDS(on): 40 mΩ
- Package Type: SOT-23
Description
The FDN306P MOSFET is a P-Channel MOSFET utilizing advanced PowerTrench® technology, optimized for low voltage applications such as battery management and load switching.
Features:
- Low On-Resistance: Ensures efficient current flow with minimal power loss
- Fast Switching Speed: Suitable for high-speed applications
- Low Threshold Voltage: Compatible with low voltage drive circuits
- Compact SOT-23 Package: Ideal for space-constrained designs
Specification
Additional information
| Weight | 0.06 g |
|---|
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