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IRFZ44N Power MOSFET TO-220

20.05 (Incl. of GST 18%)
GST Credit of 3.06available.
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In stock

  • Continuous Source Current: 49A (max)
  • Drain-to-Source Breakdown Voltage: 55V
  • Gate-to-Source Voltage: ± 20V (max)
  • Gate Threshold Voltage(VGS): 4V (max)
  • Operating Temperature: -55°C to + 175°C
  • Power Dissipation: 94W (max)
SKU: KSTM0695 Category: Tags: , , ,

Quantity based pricing table

MinMaxUnit Price
1920.05
101919.25
204918.65
509918.05
100And more.17.84

20.05 (Incl. of GST 18%)
GST Credit of 3.06available.
Know More

All orders placed before cut-off time will be dispatched same day.

Description

IRFZ44N Power MOSFET is a Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Specifications

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated

Specification

Additional information

Weight3.55 g

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KSTM0695 IRFZ44N Power MOSFET

IRFZ44N Power MOSFET TO-220

20.05 Incl. of GST

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