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IRF3205 Mosfet N-Channel – HEXFET – Power Mosfet – 55V – 110A – TO-220
GST Credit of ₹4.73available.
- Gate to source voltage: ±20V
- On-Resistance Rds(on): 8mohm at Vgs of 10V
- Power dissipation (Pd): 130W at 25°C
- Continuous drain current(Id) : 110A at Vgs 10V and 25°C
- Operating temperature: -55°C to 175°C
- Drain-to-Source Breakdown Voltage: 55V
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IRF3205 Mosfet is Advanced HEXFET Power MOSFETs and utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Gate to source voltage is ±20V
- On-Resistance Rds(on) of 8mohm at Vgs of 10V
- Power dissipation (Pd) of 130W at 25°C
- Continuous drain current (Id) of 110A at Vgs 10V and 25°C
- Operating junction temperature range from -55°C to 175°C
- Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.