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IRF840 Power MOSFET – 8A – TO-220

23.48 (Incl. of GST 18%)
GST Credit of 3.58available.
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In stock

  • Continuous Drain Current: 8A (max)
  • Drain-to-Source Breakdown Voltage(VDS): 500V
  • Gate-to-Source Voltage: ± 20V (max)
  • Gate Threshold Voltage(VGS): 4V (max)
  • Operating Temperature: -55°C to + 150°C
  • On-state resistance: 0.70 Ohm
SKU: KSTM0693 Category: Tags: , , , , ,

Quantity based pricing table

MinMaxUnit Price
1923.48
101922.31
204921.60
509921.13
100And more.20.66

23.48 (Incl. of GST 18%)
GST Credit of 3.58available.
Know More

All orders placed before cut-off time will be dispatched same day.

Description

IRF840 Power MOSFET is a HEXFETs from International Rectifier provides the designer with the best combination of fast switching, ruggedized device design, low on-state resistance and cost-effectiveness combined with high transconductance, superior reverse energy and diode recovery dv/dt capability.

Its well suited for applications such as switching power supplies, motor controls, inverters, choppers ,audio amplifiers etc. The TO-220 package is universally preferred for all commercial-industrial applications. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Specifications

  • Ease of paralleling
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Repetitive Avalanche Rated
  • Simple drive requirements

Specification

Additional information

Weight3.5 g

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KSTM0693 IRF840 Power MOSFET

IRF840 Power MOSFET - 8A - TO-220

23.48 Incl. of GST

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