SKD502T – N Channel Mosfet – TO-220

The SKD502T – N Channel Mosfet is a high-performance MOSFET designed for applications requiring low RDS(on), high current handling, and excellent thermal characteristics. With a breakdown voltage of 85V, a maximum continuous drain current of 120A, and an ultra-low on-resistance of 4.6mΩ, this MOSFET is ideal for high-efficiency switching and power management applications.

Features:

• Drain-Source Voltage (VDS): 85V
• Low On-Resistance (RDS(on)): 4.6mΩ (typical)
• Continuous Drain Current (ID): 120A
• Pulsed Drain Current (ID,pulse): 480A
• Power Dissipation (Ptot): 174W
• Thermal Resistance (RthJC): 0.72°C/W
• 100% Avalanche Tested: Ensures high reliability under extreme conditions.