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IRF540 Power MOSFET TO-220
GST Credit of ₹3.58available.
- Continuous Source Current: 28A (max)
- Drain-to-Source Breakdown Voltage: 100V
- Gate-to-Source Voltage: ± 20V (max)
- Gate Threshold Voltage(VGS): 4V (max)
- Operating Temperature: -55°C to + 175°C
- Power Dissipation: 150W(max)
IRF540 Power MOSFET is a third generation HEXFETs from International Rectifier provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
- Advanced Process Technology
- Ease of paralleling
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Rated