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FS8205A Dual N Channel Power MOSFET – SOT23-6
GST Credit of ₹1.17available.
- Package Type: SOT23-6
- 2 N Channel Power MOSFETs
- Low on Resistance
- Drain Source Breakdown Voltage: 20 V
- Gate Threshold Voltage: 0.5V to 1V
- Gate Source Voltage: ±12V
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The FS8205A Dual N Channel Power MOSFET is in SOT23-6 package. Its most widely used in battery charging applications. The chip has drain-source breakdown voltage of 20V. It has continuous source drain current of 0.83A.
Advanced Power MOSFET uses advanced processing techniques to achieve low resistance , extremely efficient and cost- effective equipment , the most suitable lithium-ion battery charge and discharge switches. The SOT23-6 package is widely used in all commercial and industrial applications.