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FS8205A Dual N Channel Power MOSFET – SOT23-6

5.90 (Incl. of GST 18%)
GST Credit of 0.90available.
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In stock

  • Package Type: SOT23-6
  • 2 N Channel Power MOSFETs
  • Low on Resistance
  • Drain Source Breakdown Voltage: 20 V
  • Gate Threshold Voltage: 0.5V to 1V
  • Gate Source Voltage:  ±12V
SKU: KSTI0633 Category: Tags: , , , ,

Quantity based pricing table

MinMaxUnit Price
1195.90
20495.43
50995.07
1001994.84
200And more.4.72

5.90 (Incl. of GST 18%)
GST Credit of 0.90available.
Know More

All orders placed before cut-off time will be dispatched same day.

Description

The FS8205A Dual N Channel Power MOSFET is in SOT23-6 package. Its most widely used in battery charging applications. The chip has drain-source breakdown voltage of 20V. It has continuous source drain current of 0.83A.

Advanced Power MOSFET uses advanced processing techniques to achieve low resistance , extremely efficient and cost- effective equipment , the most suitable lithium-ion battery charge and discharge switches. The SOT23-6 package is widely used in all commercial and industrial applications.

Specification

Additional information

Weight0.10 g

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KSTI0633 FS8205A Dual N Channel Power MOSFET

FS8205A Dual N Channel Power MOSFET – SOT23-6

5.90 Incl. of GST

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