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BSS84LT1G MOSFET P-Channel – SOT-23 – ONSemi

8.00 (Incl. of GST 18%)
GST Credit of 1.22available.
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  • Drain-Source Voltage (Vds): −50 V
  • Continuous Drain Current (Id): −130 mA
  • Total Power Dissipation (Pd): 225 mW
  • Drain-Source On-Resistance (Rds(on)): 10 Ω at Vgs = −5 V, Id = −100 mA
  • Gate Threshold Voltage (Vgs(th)): −0.9 V to −2.0 V
  • Package Type: SOT-23
  • Make: ONSemi

8.00 (Incl. of GST 18%)
GST Credit of 1.22available.
Know More

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Description

The BSS84LT1G MOSFET is a P-Channel Power MOSFET designed by ON Semiconductor, housed in a compact SOT-23 package. This device is suitable for applications requiring efficient load switching and DC-DC conversion.

Features:

  • Drain-Source Voltage (Vds): −50 V
  • Continuous Drain Current (Id): −130 mA
  • Total Power Dissipation (Pd): 225 mW
  • Drain-Source On-Resistance (Rds(on)): 10 Ω at Vgs = −5 V, Id = −100 mA
  • Gate Threshold Voltage (Vgs(th)): −0.9 V to −2.0 V
  • Package Type: SOT-23

Specification

Additional information

Weight0.04 g

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KSTT1898 BSS84LT1G MOSFET P-Channel - SOT-23 - ONSemi

BSS84LT1G MOSFET P-Channel - SOT-23 - ONSemi

8.00 Incl. of GST

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