BSS84LT1G MOSFET P-Channel – SOT-23 – ONSemi
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- Drain-Source Voltage (Vds): −50 V
- Continuous Drain Current (Id): −130 mA
- Total Power Dissipation (Pd): 225 mW
- Drain-Source On-Resistance (Rds(on)): 10 Ω at Vgs = −5 V, Id = −100 mA
- Gate Threshold Voltage (Vgs(th)): −0.9 V to −2.0 V
- Package Type: SOT-23
- Make: ONSemi
Description
The BSS84LT1G MOSFET is a P-Channel Power MOSFET designed by ON Semiconductor, housed in a compact SOT-23 package. This device is suitable for applications requiring efficient load switching and DC-DC conversion.
Features:
- Drain-Source Voltage (Vds): −50 V
- Continuous Drain Current (Id): −130 mA
- Total Power Dissipation (Pd): 225 mW
- Drain-Source On-Resistance (Rds(on)): 10 Ω at Vgs = −5 V, Id = −100 mA
- Gate Threshold Voltage (Vgs(th)): −0.9 V to −2.0 V
- Package Type: SOT-23
Specification
Additional information
Weight | 0.04 g |
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