IRF3205 Mosfet N-Channel – HEXFET – Power Mosfet – 55V – 110A – TO-220
- Gate to source voltage: ±20V
- On-Resistance Rds(on): 8mohm at Vgs of 10V
- Power dissipation (Pd): 130W at 25°C
- Continuous drain current(Id) : 110A at Vgs 10V and 25°C
- Operating temperature: -55°C to 175°C
- Drain-to-Source Breakdown Voltage: 55V
₹14.25 Incl. of GSTIRF3205 Mosfet N-Channel – HEXFET – Power Mosfet – 55V – 110A – TO-220
₹14.25 Incl. of GSTMDD50N06D MOSFET – TO-252 – MDD Semiconductor
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 50A
- Gate Threshold Voltage (VGS(TH)): 1.8V
- Gate-Source Leakage (IGSS): ±100 nA
- RDS(ON) @ VGS=10V, ID=20A: 17 mΩ
- MPN: MDD50N06D
- Make: MDD Semiconductor
₹13.50 Incl. of GSTMDD50N06D MOSFET – TO-252 – MDD Semiconductor
₹13.50 Incl. of GSTCTKD60N04 MOSFET – TO-252 – N-Channel – 40V
- Maximum Drain-Source Voltage (VDSS): 40V.
- Maximum Drain Current: 60A at TC = 25°C..
- Gate Threshold Voltage (VGS(TH)): ±25V.
- Single Pulse Avalanche Energy (EAS): 400mJ.
- Avalanche Current (IAR): 60A.
- Maximum Power Dissipation (PD): 65W at Ta = 25°C.
- Thermal Resistance (Junction to Case): 2.3°C/W (Max).
- Package: TO-252 SMD
- Make: CTK
₹11.20 Incl. of GSTCTKD60N04 MOSFET – TO-252 – N-Channel – 40V
₹11.20 Incl. of GSTFDN340P Mosfet – P-Channel – SOT-23 – OnSemi
- Rated for -2 A, 20 V operation.
- Low on-state resistance:
- 70 mΩ at VGS = -4.5 V.
- 110 mΩ at VGS = -2.5 V.
- Low gate charge of 7.2 nC (typical).
- Enhanced power handling with a high-power SOT-23 package.
- Pb-free, halogen-free, and RoHS compliant for environmentally friendly applications.
₹9.90 Incl. of GSTFDN340P Mosfet – P-Channel – SOT-23 – OnSemi
₹9.90 Incl. of GSTTP0610K-T1-GE3 – P Channel MOSFET – SOT-23
- High-Side Switching
- Low On-Resistance: 6 Ω
- Low Threshold: – 2 V (typ.)
- Maximum Continuous Drain Current: -115mA to -800mA
- Drain-Source Voltage VDS: – 60V
- Gate-Source Voltage VGS: ± 20V
₹9.90 Incl. of GSTTP0610K-T1-GE3 – P Channel MOSFET – SOT-23
₹9.90 Incl. of GSTNTR4003NT3G Small Signal MOSFET – 30V 0.56A – Single N-Channel – SOT-23 – OnSemi
- Part Number: NTR4003NT3G
- Type: N-Channel MOSFET
- Voltage Rating: 30V
- Current Rating: 0.56A
- Package: SOT-23
- Compliance: Pb-Free, RoHS Compliant
- Make: OnSemi
₹8.90 Incl. of GSTBSS84LT1G MOSFET P-Channel – SOT-23 – ONSemi
- Drain-Source Voltage (Vds): −50 V
- Continuous Drain Current (Id): −130 mA
- Total Power Dissipation (Pd): 225 mW
- Drain-Source On-Resistance (Rds(on)): 10 Ω at Vgs = −5 V, Id = −100 mA
- Gate Threshold Voltage (Vgs(th)): −0.9 V to −2.0 V
- Package Type: SOT-23
- Make: ONSemi
₹8.00 Incl. of GSTBSS84LT1G MOSFET P-Channel – SOT-23 – ONSemi
₹8.00 Incl. of GSTAO3415 20V P Channel Mosfet – SOT-23
- 20 V P Channel MOSFET
- Drain Source Voltage: -20 V
- Gate Source Voltage: ±8 V
- Continuous Drain Current: -4A
₹4.40 Incl. of GSTAO3415 20V P Channel Mosfet – SOT-23
₹4.40 Incl. of GSTFS8205A Dual N Channel Power MOSFET – SOT23-6
- Package Type: SOT23-6
- 2 N Channel Power MOSFETs
- Low on Resistance
- Drain Source Breakdown Voltage: 20 V
- Gate Threshold Voltage: 0.5V to 1V
- Gate Source Voltage: ±12V
₹3.95₹5.90Incl. of GSTFS8205A Dual N Channel Power MOSFET – SOT23-6
₹3.95₹5.90Incl. of GSTAO3400A N-Channel Mosfet – Vds – 30V – Vgs – 12V – SOT-23
- Drain-Source Voltage: 30V
- Gate-Source Voltage: ±12V DC
- Continuous Drain Current: 4.7-5.7A
- Power Dissipation : 1.4W
- Type: N Channel
₹3.90 Incl. of GSTAO3400A N-Channel Mosfet – Vds – 30V – Vgs – 12V – SOT-23
₹3.90 Incl. of GSTFDN306P Mosfet P-Channel – SOT-23
- Drain-Source Breakdown Voltage (BVDSS): -12 V
- On–State Drain Current ID(ON): -10 A
- Gate Threshold Voltage VGS(th): -0.4 V to -1.5 V
- Drain-Source On-Resistance RDS(on): 40 mΩ
- Package Type: SOT-23
₹3.85 Incl. of GSTFDN306P Mosfet P-Channel – SOT-23
₹3.85 Incl. of GSTAO3401A MOSFET – 30V 4A – P-Channel Mosfet
- Drain-Source Voltage: -30V
- Gate-Source Voltage: ±12v
- Continuous Drain Current: 4A Max
- Power Dissipation : 1.4W Max
- Input Capacitance: 645pF
₹2.30 Incl. of GSTAO3401A MOSFET – 30V 4A – P-Channel Mosfet
₹2.30 Incl. of GST
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