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Transistor PDTC114ET NPN SMD – NXP – SOT-23 – Resistor-Equipped Transistor
- Collector-Emitter Voltage (VCEO): 50 V
- Collector Current (IC): 100 mA
- Power Dissipation (Ptot): 250 mW
- DC Current Gain (hFE): Typical value of 100
- Bias Resistor Ratio (R2/R1): 1.0
- Package: SOT-23
- Make: Nexperia
₹5.00 Incl. of GSTTransistor PDTC114ET NPN SMD – NXP – SOT-23 – Resistor-Equipped Transistor
₹5.00 Incl. of GSTSMBJ22CA TVS Diode – Bidirectional – SMB (DO-214AA)
- Break Down Voltage VBR: 26.9V(Max)
- Maximum Clamping Voltage (V): 35.5V
- Maximum Reverse Stand-Off Voltage (V): 22V
- Peak pulse current Ipp: 16.9A
- Maximum Reverse Leakage Current (uA): 5uA
- Direction Type: Bi-Directional
₹3.36 Incl. of GSTSMBJ22CA TVS Diode – Bidirectional – SMB (DO-214AA)
₹3.36 Incl. of GSTME2108A33PG – 3.3V Step-Up IC – SOT89-3 – Microne
- Input voltage range: 1V to 3V
- Output voltage range: 3.3V
- Output voltage accuracy: ±2.5%
- Output Current: 400mA when Vin=3.0V
- High Efficiency: 85% (Typ.)
- Package: SOT89-3
- Make: Microne
₹11.00 Incl. of GSTME2108A33PG – 3.3V Step-Up IC – SOT89-3 – Microne
₹11.00 Incl. of GSTBSS84LT1G MOSFET P-Channel – SOT-23 – ONSemi
- Drain-Source Voltage (Vds): −50 V
- Continuous Drain Current (Id): −130 mA
- Total Power Dissipation (Pd): 225 mW
- Drain-Source On-Resistance (Rds(on)): 10 Ω at Vgs = −5 V, Id = −100 mA
- Gate Threshold Voltage (Vgs(th)): −0.9 V to −2.0 V
- Package Type: SOT-23
- Make: ONSemi
₹8.00 Incl. of GSTBSS84LT1G MOSFET P-Channel – SOT-23 – ONSemi
₹8.00 Incl. of GSTSMBJ9.0CA TVS Diode – Bidirectional – SMB (DO-214AA)
- Break Down Voltage VBR: 11.10V(Max)
- Maximum Clamping Voltage (V): 15.4V
- Maximum Reverse Stand-Off Voltage (V): 9V
- Peak pulse current Ipp: 39A
- Maximum Reverse Leakage Current (uA): 5uA
- Direction Type: Bi-Directional
₹3.36 Incl. of GSTSMBJ9.0CA TVS Diode – Bidirectional – SMB (DO-214AA)
₹3.36 Incl. of GSTTXS0104EDR 4-Bit Bidirectional Voltage-Level Translator SOIC-14
- VCCA Supply voltage: 3.6V(max)
- VCCB Supply voltage: 5.5V(max)
- Δt/Δv Input transition rise or fall rate: 10ns/V
- Port A output high voltage: VCCA × 0.8V
- Port A output low voltage: 0.4V
- Port B output high voltage: VCCB × 0.8V
- Port B output low voltage: 0.4V
₹65.00 Incl. of GSTTXS0104EDR 4-Bit Bidirectional Voltage-Level Translator SOIC-14
₹65.00 Incl. of GSTAQY211EH – 30V 1A Solid State Relay – DIP-4
- Load Output Voltage: 30V
- Load Output Current: 1A
- Total Power Dissipation: 550mW
- Operating Temperature: -40°C to 85°C
- Turn ON Time: 5ms(max)
- Turn OFF Time: 1ms(max)
₹148.00 Incl. of GSTAQY211EH – 30V 1A Solid State Relay – DIP-4
₹148.00 Incl. of GSTSP485EEN-LTR Half-Duplex RS-485 Transceivers IC – SOIC-8
- Data Rate: Up to 10Mbps
- Operating Voltage: 5V
- ESD Protection: ±15kV (Human Body Model and IEC61000-4-2 Air Discharge)
- Transceiver Mode: Half-duplex
- Package: SOIC-8
₹23.00 Incl. of GSTSP485EEN-LTR Half-Duplex RS-485 Transceivers IC – SOIC-8
₹23.00 Incl. of GSTHLW8032 Energy Metering IC – SOP-8 – Hiliwei Tech
- Voltage Range: 0-280V AC.
- Current Range: 0-50A.
- Power Measurement Accuracy: ±0.5%.
- Communication Interface: UART (9600 baud rate).
- Operating Temperature: -40°C to +85°C.
- Supply Voltage: 3.3V or 5V DC.
- Package: SOP-8.
₹50.10 Incl. of GSTHLW8032 Energy Metering IC – SOP-8 – Hiliwei Tech
₹50.10 Incl. of GSTSMBJ14CA TVS Diode – Bidirectional – SMB (DO-214AA)
- Break Down Voltage VBR: 17.20V(Max)
- Maximum Clamping Voltage (V): 23.2V
- Maximum Reverse Stand-Off Voltage (V): 14V
- Peak pulse current Ipp: 25.8A
- Maximum Reverse Leakage Current (uA): 5uA
- Direction Type: Bi-Directional
₹3.36 Incl. of GSTSMBJ14CA TVS Diode – Bidirectional – SMB (DO-214AA)
₹3.36 Incl. of GSTSMBJ60CA TVS Diode – Bidirectional – SMB (DO-214AA)
- Break Down Voltage VBR: 73.7V(Max)
- Maximum Clamping Voltage (V): 96.8V
- Maximum Reverse Stand-Off Voltage (V): 60V
- Peak pulse current Ipp: 6.2A
- Maximum Reverse Leakage Current (uA): 5uA
- Direction Type: Bi-Directional
₹3.36 Incl. of GSTSMBJ60CA TVS Diode – Bidirectional – SMB (DO-214AA)
₹3.36 Incl. of GST
