LESD5D5.0CT1G – TVS Diode – 5.0V – SOD-523
- Working reverse voltage (VRWM): 5.0 V
- Breakdown voltage (VBR @ 1 mA): 5.6 V minimum
- Peak pulse power (8/20 µs): 150 W
- Peak pulse current (IPP): 9.4 A
- ESD protection: ±15 kV (air), ±8 kV (contact)
- Package: SOD-523
₹1.65 Incl. of GSTLESD5D5.0CT1G – TVS Diode – 5.0V – SOD-523
₹1.65 Incl. of GSTSTP55NF06 N-Channel Power MOSFET – 60V / 50A – TO-220 Package
- VDS (Drain-Source Voltage): 60V
- VGS (Gate-Source Voltage): ±20V
- ID (Continuous Drain Current): 50A (TC = 25°C)
- ID (Pulsed): 200A (limited by SOA)
- RDS(on): 0.015Ω (Typ.) / 0.018Ω (Max.) @ VGS = 10V
- Power Dissipation (Ptot): 110W @ TC = 25°C
- Make: Generic
₹21.20 Incl. of GSTSTP55NF06 N-Channel Power MOSFET – 60V / 50A – TO-220 Package
₹21.20 Incl. of GSTNE5532DR IC – Dual Low Noise Operational Amplifier – SOIC-8
- Supply Voltage (VCC): ±22 V
- Input Voltage Range: ±15 V (max)
- Output Voltage Swing: ±13 V (RL > 10 kΩ)
- Slew Rate: 10 V/μs (typical)
- Input Offset Voltage: 0.5 mV typ / 5 mV max
- Input Bias Current: 30 nA typ / 500 nA max
- Make: HGSEMI
₹9.40 Incl. of GSTNE5532DR IC – Dual Low Noise Operational Amplifier – SOIC-8
₹9.40 Incl. of GSTTIP142 Transistor – NPN Power Darlington – TO-247 Package
- TIP142
- Type: NPN Silicon Power Transistor
- Package: TO-247 (Through-Hole)
- Collector-Base Voltage (VCBO): 100 V
- Collector-Emitter Voltage (VCEO): 100 V
- Emitter-Base Voltage (VEBO): 5 V
- Collector Current (IC): 10 A continuous
- Make: Generic
₹51.00 Incl. of GSTTIP142 Transistor – NPN Power Darlington – TO-247 Package
₹51.00 Incl. of GSTTransistor 2SC3356 NPN SOT-23 – FOSAN
- Type: NPN Silicon Transistor
- Package: SOT-23
- Collector-Emitter Voltage (VCEO): 12 V
- Collector-Base Voltage (VCBO): 20 V
- Emitter-Base Voltage (VEBO): 3 V
- Collector Current (IC): 100 mA
- Make: FOSAN
₹3.25 Incl. of GSTTransistor 2SC3356 NPN SOT-23 – FOSAN
₹3.25 Incl. of GSTSIM A7677S 4G LTE Development Board – Data Only
- Type: Data-Only 4G LTE Module (No Call / SMS / GNSS)
- Input Supply Voltage: 5V – 12V DC
- Data Transfer Rate (LTE): Up to 10 Mbps Downlink / 5 Mbps Uplink
- Power Consumption: ~300 mA (active), <10 mA (sleep mode)
- SIM Interface: Micro SIM Card Slot
- Antenna & Power Protection: Integrated ESD Protection
- Core Chipset: SIMCom A7677S 4G LTE Module- Data Only
₹1,060.00 Incl. of GSTSIM A7677S 4G LTE Development Board – Data Only
₹1,060.00 Incl. of GSTTIP127 PNP Transistor – TO-220 – Darlington Transistor – Generic
- Type: PNP Darlington transistor
- Collector-Emitter Voltage (VCEO): -100V
- Continuous Collector Current (IC): -5A
- Base Current (IB): -0.12A
- Power Dissipation (TC ≤ 25°C): 65W
- Thermal Resistance Junction-to-Case (RthJC): 1.92°C/W
- Package: TO-220
₹14.10 Incl. of GSTTIP127 PNP Transistor – TO-220 – Darlington Transistor – Generic
₹14.10 Incl. of GST1M Ohms Rotary Potentiometer 12mm – Knob Height 20mm
- Rotational Angle: 300° ± 10°.
- Size: 12mm compact form factor.
- Resistance Value: 1MΩ.
- Knob height: 20mm
- Rotational Torque: Smooth adjustment range for precise control.
- Mounting Style: PCB or panel mount.
- Resistance Tolerance:±10%
₹28.15 Incl. of GST1M Ohms Rotary Potentiometer 12mm – Knob Height 20mm
₹28.15 Incl. of GST10K Ohms Rotary Potentiometer 12mm – Knob Height 20mm
- Rotational Angle: 300° ± 10°.
- Size: 12mm compact form factor.
- Resistance Value: 10KΩ.
- Knob height: 20mm
- Rotational Torque: Smooth adjustment range for precise control.
- Mounting Style: PCB or panel mount.
- Resistance Tolerance:±10%
₹28.15 Incl. of GST10K Ohms Rotary Potentiometer 12mm – Knob Height 20mm
₹28.15 Incl. of GSTResistor 71.5 Ohms 71R5 1% 1/8W SMD 0805
- SMD 0805 Package
- Resistance: 71.5 Ohms or 71.5E or 71R5
- Tolerance: 1%
- Power rating: 1/8W
₹0.28 Incl. of GSTResistor 71.5 Ohms 71R5 1% 1/8W SMD 0805
₹0.28 Incl. of GST
