Best Seller
SIM A7672S 4G LTE + 2G + GNSS Development Board – With GNSS
- Input Supply: 5V-12V DC
- DATA Transfer LTE(Mbps): 10 Downlink / 5 Uplink
- Power consumption: 300mA; <10mA (sleep mode)
- SIM Holder: Micro SIM
- ESD protection for Antenna and Power Supply
- SIMCOM A7672S 4G LTE chip on-board
- Supports GNSS
- Supports 4G + 2G
₹1,530.00 Incl. of GSTSIM A7672S 4G LTE + 2G + GNSS Development Board – With GNSS
₹1,530.00 Incl. of GST
104 MYL Strip – 100nf Mylar Capacitor – TH
- Capacitance: 100nF (0.1μF)
- Tolerance: ±10%
- Dielectric Material: Mylar (Polyester Film)
- Lead Style: Radial Through-Hole
- Voltage Rating: 50 VDC
- MFR: TDK
- MPN: FK18X7R1H104K
₹1.65 Incl. of GST104 MYL Strip – 100nf Mylar Capacitor – TH
₹1.65 Incl. of GSTMH-M18 Wireless Bluetooth Audio Receiver Module – Bluetooth 4.2
- Model: MH-18
- Bluetooth Version: 4.2
- Operating Voltage (VDC): 3.7 ~ 5
- Max. Operating Current (mA): 20mA
- Transmission Distance: 20 Meters
₹101.50 Incl. of GSTMH-M18 Wireless Bluetooth Audio Receiver Module – Bluetooth 4.2
₹101.50 Incl. of GSTLM3914 Dot Bar Display Driver IC – DIP-18
- Supply Voltage: 25V
- Voltage on Output Drivers: 25V
- Package/Case: DIP-18
- Storage Temperature Range: −55°C to +150°C
₹42.00 Incl. of GSTLM3914 Dot Bar Display Driver IC – DIP-18
₹42.00 Incl. of GSTSIM A7670C 4G + 2G LTE Development Board
- Input Supply: 5V-12V DC
- Supports LTE-TDD/LTE-FDD/GSM/GPRS/EDGE.
- DATA Transfer LTE(Mbps): 10 Downlink / 5 Uplink
- Power consumption: 300mA(MAX); <10mA (sleep mode)
- SIM Holder: Micro SIM
- ESD protection for Antenna and Power Supply
- SIMcom A7670C 4G LTE chip on-board
- Support both 4G+2G.
₹1,270.00₹1,332.00Incl. of GSTSIM A7670C 4G + 2G LTE Development Board
₹1,270.00₹1,332.00Incl. of GST1.5A Multi-function Mini Boost step up module
- Input Voltage: 2.5V~VOUT-0.5V
- Output Voltage: 5V/8V/9V/12V, default is 12V
- Output current: 1A(max)
- The LED indicator can be turned off by the pad next to it
- Low power consumption
₹25.95 Incl. of GST1.5A Multi-function Mini Boost step up module
₹25.95 Incl. of GSTSI2302 Mosfet – N Channel – 2.2A – SOT-23
- Drain-Source Voltage: 20V
- Gate-Source Voltage: ±8V DC
- Continuous Drain Current: 2.2~2.8A
- Power Dissipation : 1.25W
- Type: N type
- Marking: A2SHB
₹1.90 Incl. of GSTSI2302 Mosfet – N Channel – 2.2A – SOT-23
₹1.90 Incl. of GSTPROTEKTOR Conformal Coating Spray – 550ml – Acrylic Based
- Protect PCBs from harsh environments
- Color: Transparent
- Type: Conformal acrylic Spray
- CDot Approved ,RoHS compliance, meets MIL-I-46058C qualification
- Quantity: 550 ml /390 gms
₹450.00 Incl. of GSTPROTEKTOR Conformal Coating Spray – 550ml – Acrylic Based
₹450.00 Incl. of GST
- You need to add a minimum of 10 x 50v 33pF Ceramic Capacitor's to cart.
- You need to add a minimum of 10 x 50v 33pF Ceramic Capacitor's to cart.
Espressif ESP32-S3-DevKitM-1-N8 Development board – ESP32-S3-WROOM-1-N16R8
- Microcontroller: ESP32-S3 (Dual-core, 240 MHz)
- Module: ESP32-S3-WROOM-1-N16R8 (16MB Flash, 8MB PSRAM)
- Wireless Support: 2.4 GHz Wi-Fi, Bluetooth Low Energy (BLE)
- Power Supply: 5V via Micro-USB
- Voltage Regulation: 5V to 3.3V LDO for stable board operation
- GPIO Pins: 34 I/O pins, including UART, SPI, I2C, PWM, ADC, DAC, and more
- Buttons: Boot and Reset buttons for firmware flashing and system reset
- LEDs: RGB LED (GPIO38) and 3.3V Power On LED
- USB Interface: USB-to-UART bridge for flashing and debugging
- Debugging: Supports JTAG debugging interface
- Form Factor: Compact development board with pin headers for easy integration
₹435.00 Incl. of GSTEspressif ESP32-S3-DevKitM-1-N8 Development board – ESP32-S3-WROOM-1-N16R8
₹435.00 Incl. of GSTSS14 Diode – SOD-323 – 1N5819WS – S4
- Peak Repetitive Reverse Voltage (VRR): 40V
- RMS Reverse Voltage (VR(RMS)): 28V
- Forward Continuous Current (IF): 350mA
- Repetitive Peak Forward Current (IFRM): 1.5A (@ t ≤ 1.0s)
- Power Dissipation (PD): 400mW
- Thermal Resistance (RθJA): 300°C/W
- Storage Temperature (TSTG): -65°C to +125°C
₹1.40 Incl. of GSTSS14 Diode – SOD-323 – 1N5819WS – S4
₹1.40 Incl. of GSTSS54 SMA Diode 5A 40V – Schottky Barrier Rectifier Diode
- Maximum Repetitive Peak Reverse Voltage (VRRM): 40V.
- Maximum RMS Voltage (VRMS): 28V.
- Maximum DC Blocking Voltage (VDC): 40V.
- Maximum Average Forward Rectified Current (IF(AV)): 5A.
- Peak Forward Surge Current (IFSM): 150A (8.3ms single half sine-wave).
- Maximum Forward Voltage (VF): 0.55V at 5A.
₹4.00 Incl. of GSTSS54 SMA Diode 5A 40V – Schottky Barrier Rectifier Diode
₹4.00 Incl. of GSTHLW8032 Energy Metering IC – SOP-8 – Hiliwei Tech
- Voltage Range: 0-280V AC.
- Current Range: 0-50A.
- Power Measurement Accuracy: ±0.5%.
- Communication Interface: UART (9600 baud rate).
- Operating Temperature: -40°C to +85°C.
- Supply Voltage: 3.3V or 5V DC.
- Package: SOP-8.
₹50.10 Incl. of GSTHLW8032 Energy Metering IC – SOP-8 – Hiliwei Tech
₹50.10 Incl. of GSTSKD502T – N Channel Mosfet – TO-220
- Drain-Source Voltage (VDS): 85V
- Low On-Resistance (RDS(on)): 4.6mΩ (typical)
- Continuous Drain Current (ID): 120A
- Pulsed Drain Current (ID,pulse): 480A
- Power Dissipation (Ptot): 174W
- Package: TO-220
₹44.85 Incl. of GSTSKD502T – N Channel Mosfet – TO-220
₹44.85 Incl. of GSTBSS84LT1G MOSFET P-Channel – SOT-23 – ONSemi
- Drain-Source Voltage (Vds): −50 V
- Continuous Drain Current (Id): −130 mA
- Total Power Dissipation (Pd): 225 mW
- Drain-Source On-Resistance (Rds(on)): 10 Ω at Vgs = −5 V, Id = −100 mA
- Gate Threshold Voltage (Vgs(th)): −0.9 V to −2.0 V
- Package Type: SOT-23
- Make: ONSemi
₹8.00 Incl. of GSTBSS84LT1G MOSFET P-Channel – SOT-23 – ONSemi
₹8.00 Incl. of GSTCTKD60N04 MOSFET – TO-252 – N-Channel – 40V
- Maximum Drain-Source Voltage (VDSS): 40V.
- Maximum Drain Current: 60A at TC = 25°C..
- Gate Threshold Voltage (VGS(TH)): ±25V.
- Single Pulse Avalanche Energy (EAS): 400mJ.
- Avalanche Current (IAR): 60A.
- Maximum Power Dissipation (PD): 65W at Ta = 25°C.
- Thermal Resistance (Junction to Case): 2.3°C/W (Max).
- Package: TO-252 SMD
- Make: CTK
₹11.20 Incl. of GSTCTKD60N04 MOSFET – TO-252 – N-Channel – 40V
₹11.20 Incl. of GSTNTR4003NT3G Small Signal MOSFET – 30V 0.56A – Single N-Channel – SOT-23 – OnSemi
- Part Number: NTR4003NT3G
- Type: N-Channel MOSFET
- Voltage Rating: 30V
- Current Rating: 0.56A
- Package: SOT-23
- Compliance: Pb-Free, RoHS Compliant
- Make: OnSemi
₹8.90 Incl. of GSTFDN340P Mosfet – P-Channel – SOT-23 – OnSemi
- Rated for -2 A, 20 V operation.
- Low on-state resistance:
- 70 mΩ at VGS = -4.5 V.
- 110 mΩ at VGS = -2.5 V.
- Low gate charge of 7.2 nC (typical).
- Enhanced power handling with a high-power SOT-23 package.
- Pb-free, halogen-free, and RoHS compliant for environmentally friendly applications.
₹9.90 Incl. of GSTFDN340P Mosfet – P-Channel – SOT-23 – OnSemi
₹9.90 Incl. of GSTTransistor PDTC114ET NPN SMD – NXP – SOT-23 – Resistor-Equipped Transistor
- Collector-Emitter Voltage (VCEO): 50 V
- Collector Current (IC): 100 mA
- Power Dissipation (Ptot): 250 mW
- DC Current Gain (hFE): Typical value of 100
- Bias Resistor Ratio (R2/R1): 1.0
- Package: SOT-23
- Make: Nexperia
₹5.00 Incl. of GSTTransistor PDTC114ET NPN SMD – NXP – SOT-23 – Resistor-Equipped Transistor
₹5.00 Incl. of GSTPMBT4401 Transistor SOT-23 – NPN – Switching transistor
- Collector-Base Voltage (VCBO): 60V
- Collector-Emitter Voltage (VCEO): 40V
- Emitter-Base Voltage (VEBO): 6V
- Collector Current (IC): 600mA
- Peak Collector Current (ICM): 800mA
- Total Power Dissipation (Ptot): 250mW
- Thermal Resistance Junction-to-Ambient (Rth(j-a)): 500 K/W
- Make: NEXPERIA
₹1.45 Incl. of GSTPMBT4401 Transistor SOT-23 – NPN – Switching transistor
₹1.45 Incl. of GSTBCV47 NPN Darlington Transistors SOT-23 – Nexperia
- Collector-Base Voltage (VCBO): 80 V
- Collector-Emitter Voltage (VCEO): 60 V
- Emitter-Base Voltage (VEBO): 10 V
- Continuous Collector Current (IC): 500 mA
- Package: SOT-23
- Make: Nexperia
₹11.70 Incl. of GSTBCV47 NPN Darlington Transistors SOT-23 – Nexperia
₹11.70 Incl. of GST