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Transistor PDTC114ET NPN SMD – NXP – SOT-23 – Resistor-Equipped Transistor

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  • Collector-Emitter Voltage (VCEO): 50 V
  • Collector Current (IC): 100 mA
  • Power Dissipation (Ptot): 250 mW
  • DC Current Gain (hFE): Typical value of 100
  • Bias Resistor Ratio (R2/R1): 1.0
  • Package: SOT-23
  • Make: Nexperia

5.00 (Incl. of GST 18%)
GST Credit of 0.76available.
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Description

The Transistor PDTC114ET NPN SMD is an NPN resistor-equipped transistor designed for general-purpose switching and amplification applications. Manufactured by NXP Semiconductors, this device integrates built-in bias resistors, simplifying circuit design and reducing component count.

Features:

  • Built-in Bias Resistors: Incorporates internal resistors (R1 = 10 kΩ, R2 = 10 kΩ), eliminating the need for external biasing components.
  • Simplified Circuit Design: The integrated resistors streamline circuit layouts, enhancing reliability and reducing assembly costs.
  • Compact SOT-23 Package: Housed in a small Surface-Mounted Device (SMD) package, suitable for high-density PCB layouts.

Specification

Additional information

Weight0.04 g

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Transistor PDTC114ET NPN SMD - NXP - SOT-23 - Resistor-Equipped Transistor

5.00 Incl. of GST

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