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Transistor 2SC3356 NPN SOT-23 – FOSAN
₹3.25 (Incl. of GST 18%)
GST Credit of ₹0.50available.
Know More
- Type: NPN Silicon Transistor
- Package: SOT-23
- Collector-Emitter Voltage (VCEO): 12 V
- Collector-Base Voltage (VCBO): 20 V
- Emitter-Base Voltage (VEBO): 3 V
- Collector Current (IC): 100 mA
- Make: FOSAN
Description
The Transistor 2SC3356 is a high-frequency, low-noise NPN silicon transistor designed for RF amplification and high-speed switching applications. Manufactured by FOSAN Semiconductor, it offers high gain, low noise figure, and wide bandwidth performance in a compact SOT-23 surface-mount package. It is widely used in VHF/UHF amplifiers, oscillator circuits, and low-noise front-end stages of wireless communication equipment.
Features:
- High DC current gain (hFE: 50–300)
- High transition frequency (fT = 7 GHz typical)
- Low noise figure (NF ≤ 2.0 dB @ 1 GHz)
- Low feedback capacitance (0.55 pF typical)
- Compact SOT-23 SMD package
- Ideal for VHF/UHF amplifiers and RF front-end circuits
Specification
Additional information
| Weight | 0.05 g |
|---|
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