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DF2B7AFU-H3F Diode – ESD Protection Diode – Toshiba
₹9.00 (Incl. of GST 18%)
GST Credit of ₹1.37available.
Know More
- Working Peak Reverse Voltage (VRWM): 5.5 V (Max)
- Reverse Breakdown Voltage (VBR): 6.8 V (Typ)
- Clamp Voltage (VC): 11 V (Typ @ 4 A)
- Total Capacitance (Ct): 8.5 pF (Typ @ 1 MHz)
- ESD Protection Level: ±30 kV (Contact/Air – IEC61000-4-2)
- Make: Toshiba
Description
The DF2B7AFU-H3F Diode from Toshiba is a silicon epitaxial planar TVS (Transient Voltage Suppressor) diode designed for high-performance ESD (Electrostatic Discharge) protection. Ideal for protecting high-speed signal lines in mobile devices, tablets, and notebooks, this diode offers superior low dynamic resistance, low capacitance, and snapback behavior for excellent clamping performance. It features a compact USC (2.5mm × 1.25mm) surface-mount package, making it suitable for space-constrained applications.
Specifications:
- Provides ESD protection up to ±30kV (IEC61000-4-2 contact/air)
- Suitable for use with a 5 V signal line. (VRWM≤ 5.5 V)
- Low capacitance of 8.5 pF (typical) for high-speed signal integrity
- Snapback characteristics for low clamping voltage (11V @ 4A typical)
- Ultra-low dynamic resistance of 0.2 Ω (typical)
- Compact USC package (2.5 mm × 1.25 mm) ideal for mobile and compact devices
Specification
Additional information
| Weight | 0.03 g |
|---|
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