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CTKD60N04 MOSFET – TO-252 – N-Channel – 40V
₹11.20 (Incl. of GST 18%)
GST Credit of ₹1.71available.
Know More
- Maximum Drain-Source Voltage (VDSS): 40V.
- Maximum Drain Current: 60A at TC = 25°C..
- Gate Threshold Voltage (VGS(TH)): ±25V.
- Single Pulse Avalanche Energy (EAS): 400mJ.
- Avalanche Current (IAR): 60A.
- Maximum Power Dissipation (PD): 65W at Ta = 25°C.
- Thermal Resistance (Junction to Case): 2.3°C/W (Max).
- Package: TO-252 SMD
- Make: CTK
Description
The CTKD60N04 MOSFET is a high-performance N-Channel MOSFET designed for use in power switching and high-efficiency applications. With low intrinsic capacitances, excellent switching characteristics, and an extended safe operating area, it is ideal for demanding environments such as motor controls, power supplies, and DC-DC converters. This MOSFET offers unrivaled gate charge performance and ensures reliable operation with a robust avalanche capability.
Features:
- Low intrinsic capacitances for enhanced performance.
- Excellent switching characteristics for efficient operation.
- Extended safe operating area ensures durability in demanding applications.
- Unrivalled gate charge: Qg = 29nC (Typ.).
- Drain-Source Breakdown Voltage (BVDSS): 40V.
- Maximum Drain Current (ID): 60A.
- Low On-Resistance (RDS(on)): 0.008Ω (Max) @ VG = 10V.
- 100% avalanche tested for reliability.
- Compact TO-252 package with optimized thermal performance.
Specification
Additional information
| Weight | 0.65 g |
|---|
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