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STP55NF06 N-Channel Power MOSFET – 60V / 50A – TO-220 Package
- VDS (Drain-Source Voltage): 60V
- VGS (Gate-Source Voltage): ±20V
- ID (Continuous Drain Current): 50A (TC = 25°C)
- ID (Pulsed): 200A (limited by SOA)
- RDS(on): 0.015Ω (Typ.) / 0.018Ω (Max.) @ VGS = 10V
- Power Dissipation (Ptot): 110W @ TC = 25°C
- Make: Generic
₹21.20 Incl. of GSTSTP55NF06 N-Channel Power MOSFET – 60V / 50A – TO-220 Package
₹21.20 Incl. of GST
MDD50N06D MOSFET – TO-252 – MDD Semiconductor
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 50A
- Gate Threshold Voltage (VGS(TH)): 1.8V
- Gate-Source Leakage (IGSS): ±100 nA
- RDS(ON) @ VGS=10V, ID=20A: 17 mΩ
- MPN: MDD50N06D
- Make: MDD Semiconductor
₹13.50 Incl. of GSTMDD50N06D MOSFET – TO-252 – MDD Semiconductor
₹13.50 Incl. of GSTFDN306P Mosfet P-Channel – SOT-23
- Drain-Source Breakdown Voltage (BVDSS): -12 V
- On–State Drain Current ID(ON): -10 A
- Gate Threshold Voltage VGS(th): -0.4 V to -1.5 V
- Drain-Source On-Resistance RDS(on): 40 mΩ
- Package Type: SOT-23
₹3.85 Incl. of GSTFDN306P Mosfet P-Channel – SOT-23
₹3.85 Incl. of GSTSKD502T – N Channel Mosfet – TO-220
- Drain-Source Voltage (VDS): 85V
- Low On-Resistance (RDS(on)): 4.6mΩ (typical)
- Continuous Drain Current (ID): 120A
- Pulsed Drain Current (ID,pulse): 480A
- Power Dissipation (Ptot): 174W
- Package: TO-220
₹44.85 Incl. of GSTSKD502T – N Channel Mosfet – TO-220
₹44.85 Incl. of GSTCTKD60N04 MOSFET – TO-252 – N-Channel – 40V
- Maximum Drain-Source Voltage (VDSS): 40V.
- Maximum Drain Current: 60A at TC = 25°C..
- Gate Threshold Voltage (VGS(TH)): ±25V.
- Single Pulse Avalanche Energy (EAS): 400mJ.
- Avalanche Current (IAR): 60A.
- Maximum Power Dissipation (PD): 65W at Ta = 25°C.
- Thermal Resistance (Junction to Case): 2.3°C/W (Max).
- Package: TO-252 SMD
- Make: CTK
₹11.20 Incl. of GSTCTKD60N04 MOSFET – TO-252 – N-Channel – 40V
₹11.20 Incl. of GSTFDN340P Mosfet – P-Channel – SOT-23 – OnSemi
- Rated for -2 A, 20 V operation.
- Low on-state resistance:
- 70 mΩ at VGS = -4.5 V.
- 110 mΩ at VGS = -2.5 V.
- Low gate charge of 7.2 nC (typical).
- Enhanced power handling with a high-power SOT-23 package.
- Pb-free, halogen-free, and RoHS compliant for environmentally friendly applications.
₹9.90 Incl. of GSTFDN340P Mosfet – P-Channel – SOT-23 – OnSemi
₹9.90 Incl. of GSTIRFZ44VS-VB – VBSemi – TO-263 – SMD
- Type: N-Channel MOSFET
- Drain-to-Source Voltage (Vds): 55V
- Continuous Drain Current (Id): 39A (at 25°C)
- Pulsed Source Current(Is, pulse): 220A
- Gate-to-Source Voltage (Vgs): ±20V
- Rds(on): 16.5mΩ (Max) at Vgs = 10V
- Power Dissipation (Pd): 115W
- Package: TO-263 (D2PAK)
- Input Capacitance (Ciss): 1812pF (typical)
₹57.00 Incl. of GSTIRFZ44VS-VB – VBSemi – TO-263 – SMD
₹57.00 Incl. of GSTIRF540 Power MOSFET – D2PAK – TO-263 – Generic
- Continuous Source Current: 28A (max)
- Drain-to-Source Breakdown Voltage: 100V
- Gate-to-Source Voltage: ± 20V (max)
- Gate Threshold Voltage(VGS): 4V (max)
- Operating Temperature: -55°C to + 175°C
- Power Dissipation: 150W(max)
- Package: D2PAK(TO-263)
- Make: Generic
₹37.70 Incl. of GSTIRF540 Power MOSFET – D2PAK – TO-263 – Generic
₹37.70 Incl. of GSTIRF540 Mosfet TH – TO-220 – Infineon – IRF540NPBF
- Part Number: IRF540NPBF
- Manufacturer: Infineon Technologies
- Package Type: TO-220
- Technology: N-channel MOSFET
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 33A
₹28.00 Incl. of GSTIRF540 Mosfet TH – TO-220 – Infineon – IRF540NPBF
₹28.00 Incl. of GSTIRF840 N Channel Mosfet 500V – D2PAK
- Drain-Source Voltage VDS: 500V
- Gate-Source Voltage VGS: ± 20V
- Continuous Drain Current ID: 8A max
- Package: D2PAK
₹53.00 Incl. of GSTIRF840 N Channel Mosfet 500V – D2PAK
₹53.00 Incl. of GSTAO3401A MOSFET – 30V 4A – P-Channel Mosfet
- Drain-Source Voltage: -30V
- Gate-Source Voltage: ±12v
- Continuous Drain Current: 4A Max
- Power Dissipation : 1.4W Max
- Input Capacitance: 645pF
₹2.30 Incl. of GSTAO3401A MOSFET – 30V 4A – P-Channel Mosfet
₹2.30 Incl. of GSTFDS4559 60V Mosfet – Complementary PowerTrench Mosfet – SO-8
- Drain-Source Voltage VDSS: 60V(Q1) , -60V(Q2)
- Gate-Source Voltage VGSS: ±20 V
- ID Drain Current (Continuous): 4.5A(Q1), -3.5A(Q2)
- Power Dissipation for Dual Operation: 2W
- Package: SO-8
₹24.20 Incl. of GSTFDS4559 60V Mosfet – Complementary PowerTrench Mosfet – SO-8
₹24.20 Incl. of GST