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MDD50N06D MOSFET – TO-252 – MDD Semiconductor
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 50A
- Gate Threshold Voltage (VGS(TH)): 1.8V
- Gate-Source Leakage (IGSS): ±100 nA
- RDS(ON) @ VGS=10V, ID=20A: 17 mΩ
- MPN: MDD50N06D
- Make: MDD Semiconductor
₹13.50 Incl. of GSTMDD50N06D MOSFET – TO-252 – MDD Semiconductor
₹13.50 Incl. of GST