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SMAJ5.0A TVS Diode – Unidirectional – SMA (DO-214AC) – Vishay
- Break Down Voltage VBR: 7.07(Max)
- Maximum Clamping Voltage (V): 9.2V
- Maximum Reverse Stand-Off Voltage (V): 5V
- Peak pulse current Ipp: 43.5A
- Maximum Reverse Leakage Current (uA): 800uA
- Direction Type: Uni-Directional
- Package: SMA (DO-214AC)
- Make: Vishay
- MPN: SMAJ5.0A-E3/61
₹2.90 Incl. of GSTSMAJ5.0A TVS Diode – Unidirectional – SMA (DO-214AC) – Vishay
₹2.90 Incl. of GSTSMAJ5.0CA TVS Diode – Bidirectional – SMA (DO-214AC) – Vishay
- Break Down Voltage VBR: 7.07(Max)
- Maximum Clamping Voltage (V): 9.2V
- Maximum Reverse Stand-Off Voltage (V): 5V
- Peak pulse current Ipp: 43.5A
- Maximum Reverse Leakage Current (uA): 800uA
- Direction Type: Bi-Directional
- Package: SMA (DO-214AC)
- Make: Vishay
- MPN: SMAJ5.0CA-E3/61
₹2.90 Incl. of GSTSMAJ5.0CA TVS Diode – Bidirectional – SMA (DO-214AC) – Vishay
₹2.90 Incl. of GSTPMBT4401 Transistor SOT-23 – NPN – Switching transistor
- Collector-Base Voltage (VCBO): 60V
- Collector-Emitter Voltage (VCEO): 40V
- Emitter-Base Voltage (VEBO): 6V
- Collector Current (IC): 600mA
- Peak Collector Current (ICM): 800mA
- Total Power Dissipation (Ptot): 250mW
- Thermal Resistance Junction-to-Ambient (Rth(j-a)): 500 K/W
- Make: NEXPERIA
₹1.45 Incl. of GSTPMBT4401 Transistor SOT-23 – NPN – Switching transistor
₹1.45 Incl. of GSTZener Diode 6.8V 0.5W SOD323 – BZT52C6V8S WB
- Zener Breakdown Voltage (VZ): 6.8V or 6V8
- V8Power Dissipation (PD): 0.5W
- Reverse Current (IR): 100μA at VZ = 6.8V
- Operating Junction Temperature (TJ): -25°C to +125°C
- MPN: BZT52C6V8VS WB
₹0.75 Incl. of GSTZener Diode 6.8V 0.5W SOD323 – BZT52C6V8S WB
₹0.75 Incl. of GSTZener Diode 16V 0.5W SOD323 – BZT52C16VS WK
- Zener Breakdown Voltage (VZ): 16V
- Power Dissipation (PD): 0.5W
- Reverse Current (IR): 100μA at VZ = 16V
- Operating Junction Temperature (TJ): -55°C to +150°C
- Storage Temperature (TSTG): -55°C to +150°C
- MPN: BZT52C16VS WK
₹0.85 Incl. of GSTZener Diode 16V 0.5W SOD323 – BZT52C16VS WK
₹0.85 Incl. of GSTSS14 Diode – SOD-323 – 1N5819WS – S4
- Peak Repetitive Reverse Voltage (VRR): 40V
- RMS Reverse Voltage (VR(RMS)): 28V
- Forward Continuous Current (IF): 350mA
- Repetitive Peak Forward Current (IFRM): 1.5A (@ t ≤ 1.0s)
- Power Dissipation (PD): 400mW
- Thermal Resistance (RθJA): 300°C/W
- Storage Temperature (TSTG): -65°C to +125°C
₹1.40 Incl. of GSTSS14 Diode – SOD-323 – 1N5819WS – S4
₹1.40 Incl. of GST1N4148W-7-F – Fast Switching Diode – SOD123
- Peak Repetitive Reverse Voltage (VRRM): 100V
- RMS Reverse Voltage (VR(RMS)): 71V
- Forward Continuous Current (IFM): 300mA
- Non-Repetitive Peak Forward Surge Current (IFSM): 2.0A (1µs) / 1.0A (1s)
- Power Dissipation (PD): 400mW
- Thermal Resistance (RθJA): 315°C/W
- Operating Temperature Range (TJ): -65°C to +150°C
₹1.50 Incl. of GST1N4148W-7-F – Fast Switching Diode – SOD123
₹1.50 Incl. of GSTF7 Diode – Glass Passivated Fast Recovery Diode – 1A – CTK
- Average Rectified Output Current: 1A
- Peak Reverse Voltage (VR): 1000V
- Reverse Recovery Time (trr): 500ns
- RMS Reverse Voltage: 800V
- Capacitance: 4pF @ 1MHz
- Make: CTK
- Storage Temperature: -55°C to +150°C
₹1.00 Incl. of GSTF7 Diode – Glass Passivated Fast Recovery Diode – 1A – CTK
₹1.00 Incl. of GSTMM32F0020 MCU – 32-bit Microcontroller – Arm Cortex-M0 based – MindMotion
- 32-bit Arm® Cortex®-M0 core
- Clock speed up to 48MHz
- 32KB embedded Flash
- 2KB SRAM
- Embedded Bootloader for In-System-Programming (ISP)
- Operating voltage range: 2.0V to 5.5V
- Make: MindMotion
₹40.12 Incl. of GSTMM32F0020 MCU – 32-bit Microcontroller – Arm Cortex-M0 based – MindMotion
₹40.12 Incl. of GSTDK225MD 30W SMPS IC – High-Performance PWM Controller with Built-in 650V MOSFET – DIP8
- VDD Operating Voltage: 9.5V – 32V
- On-Resistance (RDS(ON)): Max 1.4Ω
- Overvoltage Protection (VOVP): 37- 43V
- Oscillation Frequency (FOSC(fast)): Max 70kHz
- Power tube drain-source VDRAIN_MAX: 700V.
- Power: 30W max
₹33.80 Incl. of GST
