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IRFZ44VS-VB – VBSemi – TO-263 – SMD
- Type: N-Channel MOSFET
- Drain-to-Source Voltage (Vds): 55V
- Continuous Drain Current (Id): 39A (at 25°C)
- Pulsed Source Current(Is, pulse): 220A
- Gate-to-Source Voltage (Vgs): ±20V
- Rds(on): 16.5mΩ (Max) at Vgs = 10V
- Power Dissipation (Pd): 115W
- Package: TO-263 (D2PAK)
- Input Capacitance (Ciss): 1812pF (typical)
₹57.00 Incl. of GSTIRFZ44VS-VB – VBSemi – TO-263 – SMD
₹57.00 Incl. of GSTSTP55NF06 N-Channel Power MOSFET – 60V / 50A – TO-220 Package
- VDS (Drain-Source Voltage): 60V
- VGS (Gate-Source Voltage): ±20V
- ID (Continuous Drain Current): 50A (TC = 25°C)
- ID (Pulsed): 200A (limited by SOA)
- RDS(on): 0.015Ω (Typ.) / 0.018Ω (Max.) @ VGS = 10V
- Power Dissipation (Ptot): 110W @ TC = 25°C
- Make: Generic
₹21.20 Incl. of GSTSTP55NF06 N-Channel Power MOSFET – 60V / 50A – TO-220 Package
₹21.20 Incl. of GSTIRFS4321TRLPBF Mosfet – N Channel – 150V – 85A – D2PAK
- Continuous Drain Current, VGS @ 10V: 85A
- Drain-to-Source Breakdown Voltage: 150V.
- Gate Threshold Voltage: 3V-5V
- Input Capacitance: 4460pF
- Maximum Power Dissipation: 350W
₹260.00 Incl. of GSTIRFS4321TRLPBF Mosfet – N Channel – 150V – 85A – D2PAK
₹260.00 Incl. of GSTDMN2058U-7 – 20V N Channel MOSFET – SOT-23
- Device Type: N-Channel Enhancement MOSFET
- Drain-Source Voltage (VDS): 20V
- Continuous Drain Current (ID): 4.6A
- RDS(on): 40mΩ max
- Gate Threshold Voltage (VGS(th)): 0.4V to 1.2V
- Gate-Source Voltage (VGS): ±12V
- Package: SOT-23 (3-Pin)
- Operating Temperature Range: −55°C to +150°C
- Technology: Enhancement Mode MOSFET
- Mounting Type: Surface Mount (SMD)
- Make: Generic
₹7.00 Incl. of GSTDMN2058U-7 – 20V N Channel MOSFET – SOT-23
₹7.00 Incl. of GST