MDD50N06D MOSFET – TO-252 – MDD Semiconductor

The MDD50N06D MOSFET is a 60V N-Channel Enhancement Mode MOSFET designed for high-speed switching applications with low on-resistance. This device can handle up to 50A of continuous drain current and features a typical RDS(ON) of 17 mΩ at VGS=10V. Housed in a compact TO-252 package, the MDD50N06D is ideal for switching applications, power management, and motor drive circuits. Its high switching speed, low gate charge, and robust thermal characteristics make it suitable for high-current, high-efficiency applications while minimizing switching losses.

Features: 

• Drain-Source Voltage (VDS): 60V
• Continuous Drain Current (ID): 50A
• Low On-Resistance: RDS(ON) ≤17 mΩ @ VGS=10V, ID=20A
• High Switching Speed: td(on) = 13ns, tr = 25ns, td(off) = 60ns, tf = 9ns
• Low Gate Charge: Qg = 40 nC (VGS=10V, ID=20A)
• Avalanche and Thermal Robustness: TJ max = 150°C, PD = 62.5W
• TO-252 Package – Compact and easy to mount
• Input Capacitance (Ciss): 1889 pF
• Output Capacitance (Coss): 113 pF

Applications:

• High-current switching applications
• Power management circuits
• Motor drivers and controllers
• DC-DC converters
• Load switching and protection circuits