30kV ESD TVS – KTRON India https://www.ktron.in Best Shopping Site for Retail And Wholesale Electronic Components in India Tue, 30 Dec 2025 15:48:00 +0000 en-US hourly 1 https://wordpress.org/?v=5.4.6 https://www.ktron.in/wp-content/uploads/2020/04/cropped-ktron-site-icon-50x50-1-32x32.png 30kV ESD TVS – KTRON India https://www.ktron.in 32 32 DF2B7AFU-H3F Diode – ESD Protection Diode – Toshiba https://www.ktron.in/product/df2b7afu-h3f-diode/ https://www.ktron.in/product/df2b7afu-h3f-diode/#respond Wed, 17 Sep 2025 22:30:30 +0000 https://www.ktron.in/?post_type=product&p=136415
  • Working Peak Reverse Voltage (VRWM): 5.5 V (Max)
  • Reverse Breakdown Voltage (VBR): 6.8 V (Typ)
  • Clamp Voltage (VC): 11 V (Typ @ 4 A)
  • Total Capacitance (Ct): 8.5 pF (Typ @ 1 MHz)
  • ESD Protection Level: ±30 kV (Contact/Air – IEC61000-4-2)
  • Make: Toshiba
    • ]]>     The DF2B7AFU-H3F Diode from Toshiba is a silicon epitaxial planar TVS (Transient Voltage Suppressor) diode designed for high-performance ESD (Electrostatic Discharge) protection. Ideal for protecting high-speed signal lines in mobile devices, tablets, and notebooks, this diode offers superior low dynamic resistance, low capacitance, and snapback behavior for excellent clamping performance. It features a compact USC (2.5mm × 1.25mm) surface-mount package, making it suitable for space-constrained applications.

    Specifications: 

    • Provides ESD protection up to ±30kV (IEC61000-4-2 contact/air)
    • Suitable for use with a 5 V signal line. (VRWM≤ 5.5 V)
    • Low capacitance of 8.5 pF (typical) for high-speed signal integrity
    • Snapback characteristics for low clamping voltage (11V @ 4A typical)
    • Ultra-low dynamic resistance of 0.2 Ω (typical)
    • Compact USC package (2.5 mm × 1.25 mm) ideal for mobile and compact devices
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