- You need to add a minimum of 2 x CTKD60N04 MOSFET - TO-252 - N-Channel - 40V's to cart.
- You need to add a minimum of 2 x CTKD60N04 MOSFET - TO-252 - N-Channel - 40V's to cart.
Zener Diode 16V 0.5W SOD323 – BZT52C16VS WK
- Zener Breakdown Voltage (VZ): 16V
- Power Dissipation (PD): 0.5W
- Reverse Current (IR): 100μA at VZ = 16V
- Operating Junction Temperature (TJ): -55°C to +150°C
- Storage Temperature (TSTG): -55°C to +150°C
- MPN: BZT52C16VS WK
₹0.85 Incl. of GSTZener Diode 16V 0.5W SOD323 – BZT52C16VS WK
₹0.85 Incl. of GSTZener Diode 6.8V 0.5W SOD323 – BZT52C6V8S WB
- Zener Breakdown Voltage (VZ): 6.8V or 6V8
- V8Power Dissipation (PD): 0.5W
- Reverse Current (IR): 100μA at VZ = 6.8V
- Operating Junction Temperature (TJ): -25°C to +125°C
- MPN: BZT52C6V8VS WB
₹0.75 Incl. of GSTZener Diode 6.8V 0.5W SOD323 – BZT52C6V8S WB
₹0.75 Incl. of GSTSS14 Diode – SOD-323 – 1N5819WS – S4
- Peak Repetitive Reverse Voltage (VRR): 40V
- RMS Reverse Voltage (VR(RMS)): 28V
- Forward Continuous Current (IF): 350mA
- Repetitive Peak Forward Current (IFRM): 1.5A (@ t ≤ 1.0s)
- Power Dissipation (PD): 400mW
- Thermal Resistance (RθJA): 300°C/W
- Storage Temperature (TSTG): -65°C to +125°C
₹1.40 Incl. of GSTSS14 Diode – SOD-323 – 1N5819WS – S4
₹1.40 Incl. of GSTSS54 SMA Diode 5A 40V – Schottky Barrier Rectifier Diode
- Maximum Repetitive Peak Reverse Voltage (VRRM): 40V.
- Maximum RMS Voltage (VRMS): 28V.
- Maximum DC Blocking Voltage (VDC): 40V.
- Maximum Average Forward Rectified Current (IF(AV)): 5A.
- Peak Forward Surge Current (IFSM): 150A (8.3ms single half sine-wave).
- Maximum Forward Voltage (VF): 0.55V at 5A.
₹4.00 Incl. of GSTSS54 SMA Diode 5A 40V – Schottky Barrier Rectifier Diode
₹4.00 Incl. of GSTHLW8032 Energy Metering IC – SOP-8 – Hiliwei Tech
- Voltage Range: 0-280V AC.
- Current Range: 0-50A.
- Power Measurement Accuracy: ±0.5%.
- Communication Interface: UART (9600 baud rate).
- Operating Temperature: -40°C to +85°C.
- Supply Voltage: 3.3V or 5V DC.
- Package: SOP-8.
₹50.10 Incl. of GSTHLW8032 Energy Metering IC – SOP-8 – Hiliwei Tech
₹50.10 Incl. of GSTSKD502T – N Channel Mosfet – TO-220
- Drain-Source Voltage (VDS): 85V
- Low On-Resistance (RDS(on)): 4.6mΩ (typical)
- Continuous Drain Current (ID): 120A
- Pulsed Drain Current (ID,pulse): 480A
- Power Dissipation (Ptot): 174W
- Package: TO-220
₹44.85 Incl. of GSTSKD502T – N Channel Mosfet – TO-220
₹44.85 Incl. of GSTBSS84LT1G MOSFET P-Channel – SOT-23 – ONSemi
- Drain-Source Voltage (Vds): −50 V
- Continuous Drain Current (Id): −130 mA
- Total Power Dissipation (Pd): 225 mW
- Drain-Source On-Resistance (Rds(on)): 10 Ω at Vgs = −5 V, Id = −100 mA
- Gate Threshold Voltage (Vgs(th)): −0.9 V to −2.0 V
- Package Type: SOT-23
- Make: ONSemi
₹8.00 Incl. of GSTBSS84LT1G MOSFET P-Channel – SOT-23 – ONSemi
₹8.00 Incl. of GSTCTKD60N04 MOSFET – TO-252 – N-Channel – 40V
- Maximum Drain-Source Voltage (VDSS): 40V.
- Maximum Drain Current: 60A at TC = 25°C..
- Gate Threshold Voltage (VGS(TH)): ±25V.
- Single Pulse Avalanche Energy (EAS): 400mJ.
- Avalanche Current (IAR): 60A.
- Maximum Power Dissipation (PD): 65W at Ta = 25°C.
- Thermal Resistance (Junction to Case): 2.3°C/W (Max).
- Package: TO-252 SMD
- Make: CTK
₹11.20 Incl. of GSTCTKD60N04 MOSFET – TO-252 – N-Channel – 40V
₹11.20 Incl. of GSTNTR4003NT3G Small Signal MOSFET – 30V 0.56A – Single N-Channel – SOT-23 – OnSemi
- Part Number: NTR4003NT3G
- Type: N-Channel MOSFET
- Voltage Rating: 30V
- Current Rating: 0.56A
- Package: SOT-23
- Compliance: Pb-Free, RoHS Compliant
- Make: OnSemi
₹8.90 Incl. of GSTFDN340P Mosfet – P-Channel – SOT-23 – OnSemi
- Rated for -2 A, 20 V operation.
- Low on-state resistance:
- 70 mΩ at VGS = -4.5 V.
- 110 mΩ at VGS = -2.5 V.
- Low gate charge of 7.2 nC (typical).
- Enhanced power handling with a high-power SOT-23 package.
- Pb-free, halogen-free, and RoHS compliant for environmentally friendly applications.
₹9.90 Incl. of GSTFDN340P Mosfet – P-Channel – SOT-23 – OnSemi
₹9.90 Incl. of GSTTransistor PDTC114ET NPN SMD – NXP – SOT-23 – Resistor-Equipped Transistor
- Collector-Emitter Voltage (VCEO): 50 V
- Collector Current (IC): 100 mA
- Power Dissipation (Ptot): 250 mW
- DC Current Gain (hFE): Typical value of 100
- Bias Resistor Ratio (R2/R1): 1.0
- Package: SOT-23
- Make: Nexperia
₹5.00 Incl. of GSTTransistor PDTC114ET NPN SMD – NXP – SOT-23 – Resistor-Equipped Transistor
₹5.00 Incl. of GSTPMBT4401 Transistor SOT-23 – NPN – Switching transistor
- Collector-Base Voltage (VCBO): 60V
- Collector-Emitter Voltage (VCEO): 40V
- Emitter-Base Voltage (VEBO): 6V
- Collector Current (IC): 600mA
- Peak Collector Current (ICM): 800mA
- Total Power Dissipation (Ptot): 250mW
- Thermal Resistance Junction-to-Ambient (Rth(j-a)): 500 K/W
- Make: NEXPERIA
₹1.45 Incl. of GSTPMBT4401 Transistor SOT-23 – NPN – Switching transistor
₹1.45 Incl. of GST